Digital Power Grid Overlay -- 20% to 40% Total Digital Dynamic Power Reduction
Samsung begins building China fab
EETimes (9/12/2012 5:30 AM EDT)
LONDON – South Korean electronics giant Samsung Electronics Co. Ltd. has broken ground on a wafer fab for NAND memory production in Xian, in northwestern China.
Initially Samsung is investing $2.3 billion to bring the Xian fab into operation in 2014, as part of a planned total investment of $7 billion. Samsung did not indicate the manufacturing capacity it expects to achieve at various times in the wafer fabs development.
![]() |
E-mail This Article | ![]() |
![]() |
Printer-Friendly Page |
|
Related News
- Korean prosecutors name ex-Samsung exec who tried to set up copy-cat fab in China and the Taiwanese backer
- Exec tried to set up copy-cat Samsung fab in China
- Samsung to Invest $7 Billion in China Fab
- Samsung Slows Opening of Texas Fab Despite CHIPS Stimulus
- Huawei rumoured to be building secret fab stable
Breaking News
- RISC-V International Promotes Andrea Gallo to CEO
- See the 2025 Best Edge AI Processor IP at the Embedded Vision Summit
- Andes Technology Showcases RISC-V AI Leadership at RISC-V Summit Europe 2025
- RISC-V Royalty-Driven Revenue to Exceed License Revenue by 2027
- Keysom Unveils Keysom Core Explorer V1.0
Most Popular
- RISC-V International Promotes Andrea Gallo to CEO
- See the 2025 Best Edge AI Processor IP at the Embedded Vision Summit
- Andes Technology Showcases RISC-V AI Leadership at RISC-V Summit Europe 2025
- Ceva, Inc. Announces First Quarter 2025 Financial Results
- Cadence Unveils Millennium M2000 Supercomputer with NVIDIA Blackwell Systems to Transform AI-Driven Silicon, Systems and Drug Design