Samsung Ramps 10nm in 2016

FinFET Roadmap Aligns with TSMC's Plans

Jessica Lipsky, EETimes
5/22/2015 01:50 AM EDT

SAN FRANCISCO -- Samsung announced its next-generation process technology, a 10nm FinFET node, at a company event here. The announcement comes a month after Samsung detailed its 14nm process.

Samsung was shy on specs, but said the process node will be in full production by the end of 2016, about the same time as its rival TSMC. The Samsung 10nm process offers “significant power, area, and performance advantages” and targets a broad range of markets, said foundry senior vice president Hong Hao.

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